Interplay of Magnetic Properties and Doping in Epitaxial Films of h‐REFeO₃ Multiferroic Oxides

Abstract Multiferroic materials demonstrating coexistence of magnetic and ferroelectric orders are promising candidates for magnetoelectric devices. While understanding the underlying mechanism interplaying ferroic properties is important, tailoring their to make them potential devices challenging. Here, antiferromagnetic Neel ordering temperature above 200 K realized in successfully stabilized epitaxial films (Lu,Sc)FeO 3 multiferroic oxide. The first‐principles calculations show shrinkage in‐plane lattice constants unit cells on different substrates which corroborates well enhancement ( T N ). profound effect strain/stress at interface due differences out plane spin reorientation region further elucidated with without buffer layer Mn‐doped LuFeO . Writing reading domains reveal response room temperature. Detailed electron microscopy shows presence defects atomic scale. First‐principles that orbital rehybridization rare‐earth ions oxygen one main driving force ferroelectricity along c ‐axis thin hexagonal ferrites.